منابع مشابه
High voltage gain DC-DC resonant converter
In this paper, a DC-DC resonant converter with high voltage gain and small size is studied. To reduce the size and weight of this converter, the operating frequency should be as high as possible. In this research, the frequency changes from 120 to 200 kHz. Due to the high operating frequency, it is necessary to reduce the switching losses using soft switching methods. Resonant converters are su...
متن کاملHigh voltage gain DC-DC resonant converter
In this paper, a DC-DC resonant converter with high voltage gain and small size is studied. To reduce the size and weight of this converter, the operating frequency should be as high as possible. In this research, the frequency changes from 120 to 200 kHz. Due to the high operating frequency, it is necessary to reduce the switching losses using soft switching methods. Resonant converters are su...
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در طی سالهای اخیراستفاده ازمنابع انرژی تجدید پذیر در شبکه های مدرن بنا به دلایل زیست محیطی و اقتصادی به طور گسترده استفاده شده است همچون نیروگاههای بادی و خورشیدی .ولتاژتولیدی این نیروگاهها اغلب به فرم dc می باشد وادوات الکترونیک قدرت به عنوان مبدل و پل بین شکل موج dc وac استفاده می شوند.این پروسه باعث ایجاد پالسهایی برروی شکل موج خروجی می شود که می تواند وارد تجهیزات قدرت همچون ترانسفورماتور ی...
15 صفحه اولpower system voltage stability enhancement by high side voltage control
voltage stability may be improved by various control functions. in this paper, it is shown that how high side voltage control (hivc) may be employed for this purpose. two test systems, namely a 22- bus and ieee u8-bus systems are used to demonstrate the proposed tuning strategy for hsvc control parameters.
متن کاملBreakdown Voltage of High-voltage GaN FETs
GaN FETs offer superior advantages in high-voltage and high-temperature operation due to its large bandgap (3.4 eV) and high breakdown field strength (3.3 MV/cm). This combination of the large bandgap and high breakdown field makes these devices very attractive for power switching applications. In this regard, a key figure of merit is the breakdown voltage of the transistor, which must be high ...
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ژورنال
عنوان ژورنال: Journal of the Franklin Institute
سال: 1913
ISSN: 0016-0032
DOI: 10.1016/s0016-0032(13)90044-2